Miniaturizable Si-based electro-optical modulator working at 1.5 microns (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Miniaturizable Si-based electro-optical modulator working at 1.5 microns (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1928324 (literal)

Alternative label

• Sciuto A.; Libertino S.; Coffa S.; Coppola G. (2005)
  Miniaturizable Si-based electro-optical modulator working at 1.5 microns
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sciuto A.; Libertino S.; Coffa S.; Coppola G. (literal)

Pagina inizio

• 201115 (literal)

Pagina fine

• 201115 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 86 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; STMicroelect Catania, I-95121 Catania, Italy; CNR, IMM, Sez Napoli, I-80131 Naples, Italy (literal)

Titolo

• Miniaturizable Si-based electro-optical modulator working at 1.5 microns (literal)

Abstract

• Optoelectronic devices are considered the innovative element for the next generation of microelectronic integrated circuits. For this purpose, both active and passive devices-extremely miniaturized-must be implemented. We fabricated and electro-optical Si-based light intensity modulator working at 1.5 mu m using a bipolar mode field-effect transistor integrated within a Si rib waveguide. The principle of operation is the light absorption by a plasma of free carriers that can be opportunely moved inside or outside of the device optical channel by properly changing the control bias. The devices, only 100 mu m long, were fabricated using epitaxial Si wafers and standard clean room processing. The optical characterization at 1.48 mu m in static conditions shows a modulation of similar to 90% while the dynamic electrical characterization provides a switching time of approximate to 10 ns (foreseen modulation frequency of hundreds of MHz). A modulation depth above 25% is observed for modulation frequency up to 300 kHz. (literal)

Prodotto di

• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Autore CNR

• SEBANIA LIBERTINO (Unità di personale interno)
• ANTONELLA SCIUTO (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Incoming links:

Autore CNR di

• SEBANIA LIBERTINO (Unità di personale interno)
• ANTONELLA SCIUTO (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)