Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.1869312 (literal)

Alternative label

• Scalese S.; La Magna A.; Italia M.; Pannitteri S.; Privitera V.; Duffy R.; Hopstaken M.J.P. (2005)
  Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching
  in Journal of the Electrochemical Society
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Scalese S.; La Magna A.; Italia M.; Pannitteri S.; Privitera V.; Duffy R.; Hopstaken M.J.P. (literal)

Pagina inizio

• 277 (literal)

Pagina fine

• 280 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 152 (literal)

Rivista

• Journal of the Electrochemical Society (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy; Philips Res Leuven, B-3001 Louvain, Belgium; Philips Res Labs, NL-5656 AA Eindhoven, Netherlands (literal)

Titolo

• Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching (literal)

Abstract

• A 2D delineation of ultrashallow B-doped layers was performed by means of selective etch combined with transmission electron microscopy imaging. Specifically, the possibility to extract the active dopant distribution from the profile of the etched region was explored. The etch process was simulated in order to obtain the etch profile evolution and reproduce the experimental data. Good agreement between experimental results and simulated profiles was achieved. Therefore, this experimental technique supported by simulation allows quantitative correlation of the etch depth to the active dopant distribution and the expected etch depth to be calculated for a given dopant profile. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR

• MARKUS ITALIA (Persona)
• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• SALVATORE PANNITTERI (Persona)
• SILVIA SCALESE (Persona)

Insieme di parole chiave

• Keywords of "Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)
• SALVATORE PANNITTERI (Persona)
• SILVIA SCALESE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the Electrochemical Society (Rivista)

Insieme di parole chiave di

• Keywords of "Quantitative measurements of two-dimensional ultrashallow B profiles in Si by selective chemical etching" (Insieme di parole chiave)