Atomistic simulation of ion channeling in heavily doped Si : As (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Atomistic simulation of ion channeling in heavily doped Si : As (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2004.12.027 (literal)

Alternative label

• Satta A., Albertazzi E., Bianconi M., Lulli G., Balboni S., Colombo L. (2005)
  Atomistic simulation of ion channeling in heavily doped Si : As
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Satta A., Albertazzi E., Bianconi M., Lulli G., Balboni S., Colombo L. (literal)

Pagina inizio

• 112 (literal)

Pagina fine

• 117 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 230 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, Ist Microelettron & Microsistemi, Sez Bologna, I-40129 Bologna, Italy; Univ Bologna, CeSIA, I-40126 Bologna, Italy; INFM, SLACS, I-09042 Monserrato, Cagliari, Italy; Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, Cagliari, Italy (literal)

Titolo

• Atomistic simulation of ion channeling in heavily doped Si : As (literal)

Abstract

• The structure of vacancy-As complexes (V-AS(m), with m = 1,4) is calculated by first-principles methods and implemented in Monte Carlo (MC) simulation of Rutherford backscattering-channeling (RBS-C) spectra. Using this procedure the atomic position of As, inferred from the model of the complex, is no longer treated as a free parameter of the simulation, as it usually occurs within MC fitting of RBS-C spectra. Moreover, physical effects which influence the backscattering and dechanneling yields of ions, such as the lattice distortion around the vacancy, are naturally taken into account in the simulation. We investigate the sensitivity of RBS-C to the different complex models and report an example of the application of the method to the case of heavily doped Si:As equilibrated at high temperature. The comparison of simulated and experimental angular scans shows that while the hypothesis of inactive As trapped in V-AS(4) clusters is consistent with experimental observations, the presence of a significant amount of V-As clusters is unlikely. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARCO BIANCONI (Persona)
• EROS ALBERTAZZI (Unità di personale interno)
• GIORGIO LULLI (Persona)
• ALESSANDRA SATTA (Unità di personale interno)

Incoming links:

Autore CNR di

• GIORGIO LULLI (Persona)
• MARCO BIANCONI (Persona)
• EROS ALBERTAZZI (Unità di personale interno)
• ALESSANDRA SATTA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)