Defect evolution in ion irradiated 6H-SiC epitaxial layers (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Defect evolution in ion irradiated 6H-SiC epitaxial layers (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Ruggiero A., Zimbone M., Roccaforte F., Libertino S., La Via F., Reitano R., Calcagno L. (2005)
  Defect evolution in ion irradiated 6H-SiC epitaxial layers
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ruggiero A., Zimbone M., Roccaforte F., Libertino S., La Via F., Reitano R., Calcagno L. (literal)

Pagina inizio

• 485 (literal)

Pagina fine

• 488 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 483 (literal)

Rivista

• Materials science forum (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dipartimento Fis, I-95123 Catania, Italy; CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Defect evolution in ion irradiated 6H-SiC epitaxial layers (literal)

Abstract

• Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 ° C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 ° C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 ° C a main level at E,443 eV (E-1/E-2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E-1/E-2 level is mainly responsible for the luminescence quenching after irradiation. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• SEBANIA LIBERTINO (Unità di personale interno)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)