Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Roccaforte F., Giannazzo F., Bongiorno C., Libertino S., La Via F., Raineri V. (2005)
  Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte F., Giannazzo F., Bongiorno C., Libertino S., La Via F., Raineri V. (literal)

Pagina inizio

• 729 (literal)

Pagina fine

• 732 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 483 (literal)

Rivista

• Materials science forum (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC (literal)

Abstract

• The effects of ion irradiation on the Ti/4H-SiC Schottky barrier are discussed. The Ti/SiC interfacial region of test Schottky diodes was irradiated with 8 MeV Si4+ ions at fluences between 1 x 10(9) and 1 x 10(12) ions/cm(2). By increasing ion fluence, an increase of the Schottky barrier &UPhi;(B) was observed, from &UPhi;(B) = 1.05 eV in the non-irradiated sample to &UPhi;(B) =1.21 eV after irradiation at the highest fluence, accompanied by a decrease of the leakage current. Using different experimental analytical techniques enabled us to correlate the modification of the interfacial region with the contacts electrical behaviour. In particular, the structural and electrical modifications in the near-interface region (different orientation of the Ti film, defects in the epilayer, dopant deactivation) were responsible for the change of the Ti barrier after irradiation. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SEBANIA LIBERTINO (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)
• CORRADO BONGIORNO (Unità di personale interno)
• FRANCESCO LA VIA (Unità di personale interno)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• CORRADO BONGIORNO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)