Silicon carbide: Defects and devices (Articolo in rivista)

Type
Label
  • Silicon carbide: Defects and devices (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Roccaforte F., Di Franco S., Giannazzo F., La Via F., Libertino S., Raineri V., Saggio M., Zanetti E. (2005)
    Silicon carbide: Defects and devices
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roccaforte F., Di Franco S., Giannazzo F., La Via F., Libertino S., Raineri V., Saggio M., Zanetti E. (literal)
Pagina inizio
  • 663 (literal)
Pagina fine
  • 670 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; ST Microelect, I-95121 Catania, Italy (literal)
Titolo
  • Silicon carbide: Defects and devices (literal)
Abstract
  • In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in the international research scenario. In particular, some issues relative to rectifying metal/SiC contacts will be treated in more detail, in fact, establishing a correlation between material defects, processing induced defects and irradiation induced defects with the electrical behaviour of Schottky contacts is extremely important for the future optimization of almost all electronic devices, sensors and particle detectors. (literal)
Prodotto di
Autore CNR

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