Damage and recovery in doped SOI layers after high energy implantation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Damage and recovery in doped SOI layers after high energy implantation (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2004.07.024 (literal)

Alternative label

• Ferri, M; Solmi, S; Armigliato, A; Bianconi, M; Lulli, G; Nobili, D (2004)
  Damage and recovery in doped SOI layers after high energy implantation
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ferri, M; Solmi, S; Armigliato, A; Bianconi, M; Lulli, G; Nobili, D (literal)

Pagina inizio

• 20 (literal)

Pagina fine

• 24 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 114 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy (literal)

Titolo

• Damage and recovery in doped SOI layers after high energy implantation (literal)

Abstract

• Silicon on insulator (SOI) substrates, uniformly n doped with As or P at different concentrations in the range between 1.9 and 8 X 10(20) cm(-3), have been irradiated with increasing doses of high energy (2 MeV) Si+ ions. The effects of irradiation and the subsequent recovery have been followed by electrical conductivity and carrier mobility measurements and transmission electron microscopy observations. Isothermal annealings have been performed at temperatures in the range 600-800 degreesC. It was found that recovery takes place in two distinct stages which have been evidenced by using rapid thermal annealing and furnace heating. Our results show a very similar behavior for the two donors and indicate that electron trapping is the responsible of the reduction of the carrier density upon irradiation both in As and P doped samples. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALDO ARMIGLIATO (Persona)
• GIORGIO LULLI (Persona)
• MARCO BIANCONI (Persona)
• SANDRO SOLMI (Unità di personale interno)

Incoming links:

Autore CNR di

• GIORGIO LULLI (Persona)
• MARCO BIANCONI (Persona)
• SANDRO SOLMI (Unità di personale interno)
• ALDO ARMIGLIATO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)