Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation (Contributo in atti di convegno)

Type
Label
  • Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation (Contributo in atti di convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.457-460.1357 (literal)
Alternative label
  • Poggi, A; Nipoti, R; Solmi, S; Bersani, M; Vanzetti, L (2004)
    Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation
    in 0th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Poggi, A; Nipoti, R; Solmi, S; Bersani, M; Vanzetti, L (literal)
Pagina inizio
  • 1357 (literal)
Pagina fine
  • 1360 (literal)
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  • Conference: 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) Location: Lyon, FRANCE Date: OCT 05-10, 2003 contributo in conferenza di rilevanza internazionale (literal)
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  • Suilicon Carbide and Related Materials 2003 (literal)
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  • 457-460 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; ITC Irst, I-38050 Trent, Italy (literal)
Titolo
  • Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-87849-943-4 (literal)
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  • Roland Madar, Jean Camassel and Elisabeth Blanquet (literal)
Abstract
  • In this paper we investigate the thermal growth of SiO2 films on Ar+ amorphized 6H-SiC. The experimental conditions to grow oxide layers on SiC with high oxidation rate at low temperature have been determined. Rutherford Back Scattering Channeling (RBS-C), Secondary Ion Mass Spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) analyses show the presence of a C rich film at the SiC interface. The thickness of this layer increases as the oxidation time increases so that after 390 min a SiO2Cx transition region as thick as 118 nm has been evidenced between the pure stoichiometric layer of SiO2 and the SiC substrate. (literal)
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