Silicon interstitial injection during dry oxidation of SiGe/Si layers (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Silicon interstitial injection during dry oxidation of SiGe/Si layers (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1844606 (literal)

Alternative label

• Napolitani E.; Di Marino M.; De Salvador D.; Carnera A.; Spadafora M.; Mirabella S.; Terrasi A.; Scalese S. (2005)
  Silicon interstitial injection during dry oxidation of SiGe/Si layers
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Napolitani E.; Di Marino M.; De Salvador D.; Carnera A.; Spadafora M.; Mirabella S.; Terrasi A.; Scalese S. (literal)

Pagina inizio

• 036106-1 (literal)

Pagina fine

• 036106-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 97 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; INFM MATIS, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy; CNR IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Silicon interstitial injection during dry oxidation of SiGe/Si layers (literal)

Abstract

• The injection of Si self-interstitial atoms during dry oxidation at 815 degreesC of very shallow SiGe layers grown on Si (001) by molecular-beam epitaxy (MBE) has been investigated. We first quantified the oxidation enhanced diffusion (OED) of two boron deltas buried into the Si underlying the oxidized SiGe layers. Then, by simulating the interstitial diffusion in the MBE material with a code developed on purpose, we estimated the interstitial supersaturation (S) at the SiGe/Si interface. We found that S (a) is lower than that observed in pure Si, (b) is Ge-concentration dependent, and (c) has a very fast transient behavior. After such a short transient, the OED is completely suppressed, and the suppression lasts for long annealing times even after the complete oxidation of the SiGe layer. The above results have been related to the mechanism of oxidation of SiGe in which the Ge piles up at the SiO2/SiGe interface by producing a thin and defect-free layer with a very high concentration of Ge. (literal)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ENRICO NAPOLITANI (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• SILVIA SCALESE (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR di

• SALVATORE MIRABELLA (Unità di personale interno)
• SILVIA SCALESE (Persona)
• ENRICO NAPOLITANI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)