Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer (Contributo in atti di convegno) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Moscatelli F., Scorzoni A., Poggi A., Canino M., Nipoti R. (2005)
  Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer
  in 5th Euopean Conference on Silicon Carbide and Related Materials, Bologna, August 31 - September 4, 2004
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Moscatelli F., Scorzoni A., Poggi A., Canino M., Nipoti R. (literal)

Pagina inizio

• 737 (literal)

Pagina fine

• 740 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 483 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Perugia, DIEI, I-06125 Perugia, Italy; Univ Perugia, Ist Nazl Fis Nucl, I-06125 Perugia, Italy; Univ Bologna, Dipartimento Fis, I-40126 Bologna, Italy (literal)

Titolo

• Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-0-87849-963-2 (literal)

Abstract

• Recently Ni/SiC contacts have been studied in order to achieve very low contact resistivity (pc) values on n-type SiC. In this work contact resistivity values of Ni-silicide contacts to n-type ion implanted 6H-SiC are analyzed aiming at extracting the Schottky Barrier Height (SBH). The n-type ion implanted 6H-SiC specimens were annealed at 1300, 1500, 1650° C for 20 min in a high purity Ar ambient. The p. values have been extracted from Transmission Line Method (TLM) measurements in the range of temperatures 25-290° C. The ρ(c) values are in the range 1-5 x 10(-5) &UOmega; cm(2) depending on the annealing temperature. The SBH OB,, has been extracted by exploiting the dependence of the contact resistivity on the temperature. By using the field emission model, the value obtained for OB, on our samples is in the range 1.1-1.3 eV depending on the annealing temperature. The SBH on p-type 6H-SiC has been evaluated on Schottky diodes by means of both I-V and C-V measurements. A value of qφ(Bp) = (1.75 ± 0.05) eV has been obtained on p-type SiC through the C-V method. The average SBH extracted from I-V data collected at room temperature is (1.19 ± 0.03) eV and this value increases as a function of the temperature until (1.50 ± 0.01) eV at 290° C. Differences between values of SBH extracted from I-V and from C-V measurements are explained in terms of inhomogeneous barrier height. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)
• ANDREA SCORZONI (Persona)
• ROBERTA NIPOTI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANDREA SCORZONI (Persona)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)