Measurements and simulations of charge collection efficiency of p(+)/n junction SiC detectors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Measurements and simulations of charge collection efficiency of p(+)/n junction SiC detectors (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nima.2005.03.048 (literal)

Alternative label

• Moscatelli F.; Scorzoni A.; Poggi A., Bruzzi M.; Lagomarsino S.; Mersi S.; Sciortino S.; Nipoti R. (2005)
  Measurements and simulations of charge collection efficiency of p(+)/n junction SiC detectors
  in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Moscatelli F.; Scorzoni A.; Poggi A., Bruzzi M.; Lagomarsino S.; Mersi S.; Sciortino S.; Nipoti R. (literal)

Pagina inizio

• 218 (literal)

Pagina fine

• 221 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 546 (literal)

Rivista

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Perugia, Ist Nazl Fis Nucl, I-06125 Perugia, Italy; Univ Perugia, DIEI, I-06125 Perugia, Italy; Dipartimento Fis, Florence, Italy (literal)

Titolo

• Measurements and simulations of charge collection efficiency of p(+)/n junction SiC detectors (literal)

Abstract

• Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments (RD50, LHCC 2002-2003, 15 February 2002, CERN, Ginevra). In this work p(+)/n SiC diodes realised on a medium-doped (1 X 10(15) cm(-3)), 40 mu m thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from a Sr-90 source are presented. Preliminary results up to 900 V reverse bias voltage show a good collection efficiency of 1700e(-) and a collection length (ratio between collected charge and generated e-h pairs/mu m) equal to the estimated width of the depleted region. Preliminary simulations on Schottky diodes have been carried out using the ISE-TCAD DESSIS simulation tool. Experimental results were reproduced well. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)
• ANDREA SCORZONI (Persona)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Measurements and simulations of charge collection efficiency of p(+)/n junction SiC detectors" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANDREA SCORZONI (Persona)
• FRANCESCO MOSCATELLI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (Rivista)

Insieme di parole chiave di

• Parole chiave di "Measurements and simulations of charge collection efficiency of p(+)/n junction SiC detectors" (Insieme di parole chiave)