Analysis of ion implanted silicon by RBS-channeling: influence of the damage model (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Analysis of ion implanted silicon by RBS-channeling: influence of the damage model (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2004.01.059 (literal)

Alternative label

• Bianconi, M; Albertazzi, E; Balboni, S; Lulli, G (2004)
  Analysis of ion implanted silicon by RBS-channeling: influence of the damage model
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bianconi, M; Albertazzi, E; Balboni, S; Lulli, G (literal)

Pagina inizio

• 232 (literal)

Pagina fine

• 235 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.sciencedirect.com/science/article/pii/S0168583X04000874 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 219 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Bologna, CeSIA Settore Reti & Comunicaz, I-40126 Bologna, Italy (literal)

Titolo

• Analysis of ion implanted silicon by RBS-channeling: influence of the damage model (literal)

Abstract

• In this work two different models of damage have been applied to the binary collision approximation Monte Carlo simulation of the RBS-channeling spectra of ion implanted silicon. We compare a widely used description of interstitial defects consisting of randomly displaced atoms in an unperturbed lattice with a model based on split-<110> interstitials combined with the induced lattice relaxation, as calculated by the application of the EDIP potential. The sample was prepared by 180 keV Si implantation with dose 10(14) cm(-1). This process produces a 0.7 mum damaged region, with a few atomic percent maximum damage concentration. The RBS-channeling measurements were performed with a 2 MeV He beam aligned along <100>, <110>, <120>, <130>, <111>, <112>, <113> axes and {100}, {110} planes. By making use of the two beam model, we show that the experimental data set can be normalised to display a characteristic signature of the defects present in the sample and that this signature is compatible with the <110>-split relaxed interstitial. (literal)

Prodotto di

• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• EROS ALBERTAZZI (Unità di personale interno)
• MARCO BIANCONI (Persona)
• GIORGIO LULLI (Persona)

Insieme di parole chiave

• Keywords of "Analysis of ion implanted silicon by RBS-channeling: influence of the damage model" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIORGIO LULLI (Persona)
• MARCO BIANCONI (Persona)
• EROS ALBERTAZZI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Insieme di parole chiave di

• Keywords of "Analysis of ion implanted silicon by RBS-channeling: influence of the damage model" (Insieme di parole chiave)