Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2004.12.022 (literal)

Alternative label

• Lo Nigro R., Toro R.G., Malandrino G., Fiorenza P., Raineri V., Fragala I.L. (2005)
  Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lo Nigro R., Toro R.G., Malandrino G., Fiorenza P., Raineri V., Fragala I.L. (literal)

Pagina inizio

• 117 (literal)

Pagina fine

• 121 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 118 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, INSTM, Dipartimento Sci Chim, I-95125 Catania, Italy; CNR, IMM, Sez Catania, I-95127 Catania, Italy (literal)

Titolo

• Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films (literal)

Abstract

• Praseodymium oxide-based dielectric thin films have been grown using metal-organic chemical vapor deposition (MOCVD) technique on p-and n-type Si (0 0 1) substrates. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses have revealed that depositions at 750 degrees C in 1.33 x 10(-1) Pa oxygen partial pressure have produced Pr2O3 films with a praseodymium silicate bottom layer. The influence of deposition temperature has been evaluated carrying out deposition experiments in the 450-850 degrees C range. The structural characterization of praseodymium oxide-based films has been performed using X-ray diffraction and transmission electron microscopy (TEM). Films deposited in the low deposition temperature range (450-650 degrees C) are quite amorphous and the praseodymium silicate bottom layer thickness is smaller than in the case of high temperature deposited films. In the 650-850 degrees C deposition temperature range hexagonal Pr2O3 polycrystalline films have been grown. Finally, the electrical properties of both amorphous and polycrystalline praseodymium oxide films have been investigated and compared. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)
• PATRICK FIORENZA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films" (Insieme di parole chiave)