Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/cm048685f (literal)

Alternative label

• Lo Nigro R., Toro R.G., Malandrino G., Condorelli G.G., Raineri V., Fragala I.L. (2005)
  Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process
  in Advanced functional materials (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lo Nigro R., Toro R.G., Malandrino G., Condorelli G.G., Raineri V., Fragala I.L. (literal)

Pagina inizio

• 838 (literal)

Pagina fine

• 845 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 15 (literal)

Rivista

• Advanced functional materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy; INSTM, UdR Catania, I-95125 Catania, Italy; CNR, IMM, Sez Catania, I-95127 Catania, Italy (literal)

Titolo

• Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process (literal)

Abstract

• Praseodymium-containing thin films have been deposited on Si(001) substrates by metal-organic chemical vapor deposition (MOCVD) from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptanedione) precursor. The structural, compositional, and morphological film characterization has been investigated using X-ray diffraction (XRD), angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and transmission electron microscopy (TEM). Detailed studies of the deposition parameters indicate that the MOCVD process is governed by a kinetic regime and that some reactive phenomena occur at the film/substrate interface, forming a praseodymium silicate layer. A possible explanation for interfacial interaction has been proposed, taking into account the diffusion of Si from the substrate towards the bulk and that of oxygen from the film surface toward the substrate/ film interface. Finally, the electrical characterization of the praseodymium silicate layer has been carried out in order to evaluate its potential implementation as an alternative dielectric. Its dielectric constant has been evaluated to be about 8. (literal)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• RAFFAELLA LO NIGRO (Unità di personale interno)
• VITO RAINERI (Persona)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Advanced functional materials (Rivista)

Insieme di parole chiave di

• Keywords of "Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process" (Insieme di parole chiave)