Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes (Articolo in rivista)

Type
Label
  • Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via F., Roccaforte F., Di Franco S., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abbagnale G., Valente G.L., Crippa D. (2005)
    Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via F., Roccaforte F., Di Franco S., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abbagnale G., Valente G.L., Crippa D. (literal)
Pagina inizio
  • 429 (literal)
Pagina fine
  • 432 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 483 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM Sez Catania, I-95121 Catania, Italy; Catania Univ, Dept Phys, I-95123 Catania, Italy; BIC Sicilia, Epitaxial Technol Ctr, I-95030 Catania, Italy; STM, I-95121 Catania, Italy; LPE, I-20021 Bollate, Mi, Italy (literal)
Titolo
  • Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes (literal)
Abstract
  • The effects of the Si/H-2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2 ratio of 0.05 % silicon nucleation in the gas phase occurs producing a great amount of silicon particles that precipitate on the wafers. The epitaxial layers grown with a Si/H-2 ratio of 0.03% show a low defect density and a low leakage current of the Schottky diodes realized on these wafers. For these diodes the DLTS spectra show the presence of several peaks at 0.14, 0.75, 1.36 and 1.43 eV. For epitaxial layers grown with higher values of the Si/H-2 ratio and then with an higher growth rate, the leakage current of the Schottky diodes increases considerably. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it