Drift mobility in 4H-SiC Schottky diodes (Articolo in rivista)

Type
Label
  • Drift mobility in 4H-SiC Schottky diodes (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via F., Galvagno G., Roccaforte F., Ruggiero A., Calcagno L. (2005)
    Drift mobility in 4H-SiC Schottky diodes
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via F., Galvagno G., Roccaforte F., Ruggiero A., Calcagno L. (literal)
Pagina inizio
  • 142105 (literal)
Pagina fine
  • 142105 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; Catania Univ, Dept Phys & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Drift mobility in 4H-SiC Schottky diodes (literal)
Abstract
  • In this work, the temperature dependence of the mobility along the c axis in 4H-SiC was determined from the current voltage (I-V) characteristics of Schottky diodes in the temperature range 80-700 K. The procedure used series resistance measurements in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of 1.2x10(16) cm(-3), at room temperature, a mobility value of 724 cm(2)/(V s) was found, which decreased to 48.6 cm(2)/(V s) at 700 K. In the temperature range 200-700 K, a dependence of the mobility as T-3 was determined. (literal)
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