Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2005.08.076 (literal)

Alternative label

• Giannazzo F., Raineri V., Mirabella S., Bruno E., Impellizzeri G., Priolo F. (2005)
  Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F., Raineri V., Mirabella S., Bruno E., Impellizzeri G., Priolo F. (literal)

Pagina inizio

• 54 (literal)

Pagina fine

• 61 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• Invited paper (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 124 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; Catania Univ, INFM, MATIS, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology (literal)

Abstract

• In this paper, we review our recent work to assess scanning capacitance microscopy (SCM) as a quantitative two-dimensional (2D) carrier profiling method on Si. SCM measurements on a wide variety of samples are discussed. In the case of unipolar Si samples (i.e. samples with a unique majority carriers type) the reliability of the method for quantification of the SCM raw data to carrier concentration profiles has been demonstrated. Angle beveling sample preparation allows quantitative carrier profiling with unprecedented depth resolution (1 nm), as demonstrated on specially designed samples containing 13-doped Si/Si0.75Ge0.25/Si quantum wells. Applications to the study of the dopant diffusion and electrical activation of low-energy implanted B in submicron areas (0.38 mu m) are shown. In the case of bipolar Si samples (i.e. samples containing electrical junctions), the crucial issue of electrical junction position determination both on cross-section and on bevel is addressed. Applications to a cross-sectioned 0.35 mu m n-p-n transistor characterization are shown. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• SALVATORE MIRABELLA (Unità di personale interno)
• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)

Insieme di parole chiave

• Keywords of "Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology" (Insieme di parole chiave)