Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Giannazzo F., Bruno, E., Mirabella S., Impellizzeri G., Napolitani E., Raineri V., Priolo F., Alquier D. (2005)
  Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si
  in Diffusion and defect data, solid state data. Part B, Solid state phenomena
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F., Bruno, E., Mirabella S., Impellizzeri G., Napolitani E., Raineri V., Priolo F., Alquier D. (literal)

Pagina inizio

• 395 (literal)

Pagina fine

• 399 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 108 (literal)

Rivista

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Catania, MATIS, INFM, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Padua, MATIS, INFM, I-34131 Trieste, Italy; Univ Padua, Dipartimento Fis, I-34131 Trieste, Italy; Univ Tours, LMP, F-37071 Tours 2, France (literal)

Titolo

• Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (literal)

Abstract

• In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 degrees C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• ELENA BRUNO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• SALVATORE MIRABELLA (Unità di personale interno)
• FRANCESCO PRIOLO (Persona)
• ENRICO NAPOLITANI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• ELENA BRUNO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)