Carrier distribution in quantum nanostructures by scanning capacitance microscopy (Articolo in rivista)

Type
Label
  • Carrier distribution in quantum nanostructures by scanning capacitance microscopy (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1827342 (literal)
Alternative label
  • Giannazzo F; Raineri V; La Magna A; Mirabella S; Impellizzeri G; Piro AM; Priolo F; Napolitani E; Liotta SF (2005)
    Carrier distribution in quantum nanostructures by scanning capacitance microscopy
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo F; Raineri V; La Magna A; Mirabella S; Impellizzeri G; Piro AM; Priolo F; Napolitani E; Liotta SF (literal)
Pagina inizio
  • 014302 (literal)
Pagina fine
  • 014302 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 97 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Catania, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; Univ Padua, INFM, MATIS, I-35131 Padua, Italy; STMicroelect, I-95121 Catania, Italy (literal)
Titolo
  • Carrier distribution in quantum nanostructures by scanning capacitance microscopy (literal)
Abstract
  • Scanning capacitance microscopy (SCM) was carried out in the angle beveling configuration on B doped, very narrow quantum wells (QWs) of Si0.75Ge0.25 layers strained between Si films. The majority carrier concentration profiles were calculated from the SCM raw data measured on QWs with a minimum width of 5 nm, doped with different B concentrations ranging from 2x10(16) to 6x10(18) cm(-3). The equilibrium carrier distribution in the heterostructures has been calculated by different simulation approaches, which will be discussed. Moreover, the effect of the biased tip-sample interaction was studied by accurate simulations of the dC/dV vs V characteristics for different positions of the tip moving on the beveled sample surface. The agreement between the experimental and simulated SCM profiles is very good. Thus, a spatial SCM resolution of at least 5 nm was demonstrated on angle beveled samples, not only in terms of signal sensitivity, but also in terms of quantitative majority carrier profiling. (literal)
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