NO2-gas-sensing properties of mixed In2O3-SnO2 thin films (Articolo in rivista)

Type
Label
  • NO2-gas-sensing properties of mixed In2O3-SnO2 thin films (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2005.04.022 (literal)
Alternative label
  • Forleo A., Francioso L., Epifani M., Capone S., Taurino A.M., Siciliano P. (2005)
    NO2-gas-sensing properties of mixed In2O3-SnO2 thin films
    in Thin solid films (Print); Elsevier B.V., Amsterdam (Belgio)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Forleo A., Francioso L., Epifani M., Capone S., Taurino A.M., Siciliano P. (literal)
Pagina inizio
  • 68 (literal)
Pagina fine
  • 73 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.journals.elsevier.com/thin-solid-films/ (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 490 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Lecce, I-73100 Lecce, Italy (literal)
Titolo
  • NO2-gas-sensing properties of mixed In2O3-SnO2 thin films (literal)
Abstract
  • Semiconductor sensors based on nanocrystalline SnO2, In2O3 and In2O3-SnO2 thin films have been investigated for detecting low concentration (2-20 ppm) of nitrogen dioxide in dry air. In this work the gas-sensitive layers were prepared by modified sol-gel methods making use of non-standard precursors and a suitable surfactant. The samples have been structurally and morphologically characterized by Xray diffraction and SEM, respectively. Good gas-sensing responses towards NO2 have been found for all the prepared samples with improved performances for the In2O3-SnO2 based sensor. The performances of the sensors have been discussed according to the surface chemical reactions between the gas phase and the semiconductor. (literal)
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