Current transport by defects in Pr2O3 high k films (Articolo in rivista)

Type
Label
  • Current transport by defects in Pr2O3 high k films (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Fiorenza P., Lo Nigro R., Raineri V., Lombardo S. (2005)
    Current transport by defects in Pr2O3 high k films
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fiorenza P., Lo Nigro R., Raineri V., Lombardo S. (literal)
Pagina inizio
  • 717 (literal)
Pagina fine
  • 722 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, I-95121 Catania, Italy; Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy (literal)
Titolo
  • Current transport by defects in Pr2O3 high k films (literal)
Abstract
  • The conduction mechanism in Si/SiO2/PrxSiyOz/Pr2O3 stack deposited by Metal-Organic Chemical Vapour Deposition (MOCVD) has been investigated and correlated to the electrical defects by performing current density-voltage (J-V) measurements at several temperatures (from 100 degrees C to 200 degrees C). The Hill's diagram indicated that at high electric fields the conduction follows the Poole-Frenkel mechanism. Nanoscopic and microscopic properties have been correlated by comparison between capacitance voltage (C-V) measurements on large area MOS devices and measurements carried out at nanometer scale by scanning capacitance microscopy (SCM). A trap density of 4.77 x 10(11) cm(-2) was measured independently of the scale dimension. Finally, the energy levels contributing to the conduction phenomena were determined to be located at the midgap. (literal)
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