From micro- to nanotransport properties in Pr2O3-based thin layers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• From micro- to nanotransport properties in Pr2O3-based thin layers (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2012514 (literal)

Alternative label

• Fiorenza P., Lo Nigro R., Raineri V., Lombardo S., Toro R.G., Malandrino G., Fragala I.L. (2005)
  From micro- to nanotransport properties in Pr2O3-based thin layers
  in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fiorenza P., Lo Nigro R., Raineri V., Lombardo S., Toro R.G., Malandrino G., Fragala I.L. (literal)

Pagina inizio

• 044312/1 (literal)

Pagina fine

• 044312/6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 98 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy; Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy (literal)

Titolo

• From micro- to nanotransport properties in Pr2O3-based thin layers (literal)

Abstract

• In this paper, the conduction mechanisms in Si/SiO2/PrxSiyOz/Pr2O3/Au metal-insulator-semiconductor capacitors have been investigated. The dielectric stack has been produced by metal-organic chemical-vapor deposition. Nanoscopic and microscopic capacitance properties have been correlated. The capacitance-voltage (C-V) characteristics of 25-mu m-radius metal-oxide-semiconductor capacitors have been evaluated and compared to the measurements performed by scanning capacitance microscopy (SCM). The study of the SCM images allows us to confirm the value of interface state density (D(it)approximate to 10(12) cm(-2) eV(-1)) obtained by C-V investigation excluding any defect or grain-boundary contribution in the capacitance phenomena. The conduction mechanisms have been investigated by current-density-voltage (J-V) measurements performed at different temperatures (from 100 to 200 degrees C). At low electric fields, a slight dependence of J-V characteristics in function of both temperature and electric field has been observed, while a relatively strong dependence at high fields has been found. Hill's diagram indicated that at high electric fields the conduction follows the Poole-Frenkel mechanism. Finally, Hill's diagram points out that the traps contributing to the conduction phenomena are approximately at the midgap value. (literal)

Editore

• AIP, American institute of physics (Editore)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROBERTA GRAZIA TORO (Unità di personale interno)
• VITO RAINERI (Persona)
• SALVATORE LOMBARDO (Persona)
• PATRICK FIORENZA (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "From micro- to nanotransport properties in Pr2O3-based thin layers" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• SALVATORE LOMBARDO (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)
• PATRICK FIORENZA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Editore di

• AIP, American institute of physics (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "From micro- to nanotransport properties in Pr2O3-based thin layers" (Insieme di parole chiave)