Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Calcagno L., Ruggiero A., Roccaforte F., La Via F. (2005)
  Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Calcagno L., Ruggiero A., Roccaforte F., La Via F. (literal)

Pagina inizio

• 023713 (literal)

Pagina fine

• 023713 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 98 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy; CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier (literal)

Abstract

• The electrical characteristics of nickel-silicide Schottky contacts on silicon carbide have been measured by using current-voltage technique in the temperature range of 120-700 K. Thermal annealing at 873 K formed the nickel silicide. The electrical behavior of the contact showed a deviation from linearity at low temperatures. Annealing at high temperature (1223 K) produces deep modifications in the electrical characteristics at low bias and low temperatures, which are consistent with the formation of an inhomogeneous barrier. The description of the experimental results by using Tung''''s model [R. T. Tung, Phys. Rev. B 45, 13509 (1992)] allowed us to determine the values of the average barrier height of 1.62 and 1.14 eV for the diode annealed at 873 and 1223 K, respectively. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)