Submicron confinement effect on electrical activation of B implanted in Si (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Submicron confinement effect on electrical activation of B implanted in Si (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2005.08.064 (literal)

Alternative label

• Bruno E., Mirabella S., Impellizzeri G., Priolo F., Giannazzo F., Raineri V., Napolitani E. (2005)
  Submicron confinement effect on electrical activation of B implanted in Si
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bruno E., Mirabella S., Impellizzeri G., Priolo F., Giannazzo F., Raineri V., Napolitani E. (literal)

Pagina inizio

• 257 (literal)

Pagina fine

• 260 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 124 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; CNR, IMM, I-95121 Catania, Italy; Univ Padua, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)

Titolo

• Submicron confinement effect on electrical activation of B implanted in Si (literal)

Abstract

• In this work we studied the effect of B implantation in Si through submicron laterally confined area on B clustering and its electrical activation. For this study, we implanted B 3 keV into a Si wafer grown by Molecular Beam Epitaxy (MBE) through a patterned oxide mask with opening widths down to 0.38 mu m. Then, we annealed the sample at 800 degrees C for several times up to 120 min and monitored the 2D carrier profile by quantitative high resolution Scanning Capacitance Microscopy (SCM). We show that by reducing the opening widths, not only the B clustering is strongly reduced, but also the B cluster dissolution is accelerated. This demonstrates the beneficial role of implanted B confinement on the B electrical activation. The above results have a significant impact in the modem Si based electronic device engineering. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIULIANA IMPELLIZZERI (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FRANCESCO PRIOLO (Persona)
• VITO RAINERI (Persona)
• ENRICO NAPOLITANI (Persona)

Insieme di parole chiave

• Keywords of "Submicron confinement effect on electrical activation of B implanted in Si" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Submicron confinement effect on electrical activation of B implanted in Si" (Insieme di parole chiave)