B activation enhancement in submicron confined implants in Si (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• B activation enhancement in submicron confined implants in Si (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2061867 (literal)

Alternative label

• Bruno E., Mirabella S., Impellizzeri G., Priolo F., Giannazzo F., Raineri V., Napolitani E. (2005)
  B activation enhancement in submicron confined implants in Si
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bruno E., Mirabella S., Impellizzeri G., Priolo F., Giannazzo F., Raineri V., Napolitani E. (literal)

Pagina inizio

• 133110 (literal)

Pagina fine

• 133110 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 87 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, MATIS, INFM, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; Univ Padua, MATIS, INFM, I-35131 Padua, Italy (literal)

Titolo

• B activation enhancement in submicron confined implants in Si (literal)

Abstract

• We implanted 3 keV B ions into a crystalline Si film, grown by molecular-beam epitaxy and masked by SiO2 stripes with opening widths ranging from 3.2 mu m down to 0.38 mu m. Thermal anneals were performed at 800 degrees C for several times. By quantitative high-resolution scanning capacitance microscopy, we demonstrated that the electrical reactivation of inactive B after postimplant annealing is obtained at faster rates as the window width decreases. Total electrical activation is gained first in the narrowest window, with times shorter by nearly a factor of 4 compared to the widest one. In addition, since inactive B seems to be caused by B clustering induced by implantation, our results put in evidence a strong effect of implantation confinement also on B clusters dissolution mechanism. These results have a strong impact on the modern silicon-based device engineering. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ENRICO NAPOLITANI (Persona)
• FILIPPO GIANNAZZO (Persona)
• FRANCESCO PRIOLO (Persona)
• ELENA BRUNO (Persona)
• VITO RAINERI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• SALVATORE MIRABELLA (Unità di personale interno)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• ELENA BRUNO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)