Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon (Articolo in rivista)

Type
Label
  • Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1107/S0108768105022585 (literal)
Alternative label
  • Alberti A.; Bongiorno C.; Cafra B.; Mannino G.; Rimini E.; Metzger T.; Mocuta C.; Kammler T.; Feudel T. (2005)
    Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon
    in Acta crystallographica. Section B, Structural science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alberti A.; Bongiorno C.; Cafra B.; Mannino G.; Rimini E.; Metzger T.; Mocuta C.; Kammler T.; Feudel T. (literal)
Pagina inizio
  • 486 (literal)
Pagina fine
  • 491 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 61 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; European Synchrotron Radiat Facil, F-38043 Grenoble, France; AMD Saxony LLC & Co KG, Dresden, Germany (literal)
Titolo
  • Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon (literal)
Abstract
  • In a system consisting of two different lattices, structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress whilst avoiding the formation of a polycrystalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that in spite of its orthorhombic structure, a 14 nm-thick NiSi layer can three-dimensionally adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer, but instead it improves the structural and electrical stability of the silicide in comparison with a 24 nm-thick layer formed using the same annealing process. These results have relevant implications for the thickness scaling of NiSi layers which are currently used as metallizations of electronic devices. (literal)
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