http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35474
X-ray diffraction imaging investigation of silicon carbide on insulator structures (Articolo in rivista)
- Type
- Label
- X-ray diffraction imaging investigation of silicon carbide on insulator structures (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Milita S. 1, Le Tiec Y. 2, Pernot E. 3, Di Cioccio L. 2, Hartwig J. 4, Baruchel J. 4, Servidori M. 1, Letertre F. 5 (2002)
X-ray diffraction imaging investigation of silicon carbide on insulator structures
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Milita S. 1, Le Tiec Y. 2, Pernot E. 3, Di Cioccio L. 2, Hartwig J. 4, Baruchel J. 4, Servidori M. 1, Letertre F. 5 (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
- Caratterizzazione mediante topografia X con luce di sincrotrone di un processo innovativo per produrre SiCOI, capace di dare buoni risultati dal punto di vista difettivo a costi di produzione relativamente contenuti. (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. IMM-CNR Sezione di Bologna; 2. CEA/LETI, France; 3. LMGP-ENSPG, France; 4. ESRF, France; 5. SOITEC, France
(literal)
- Titolo
- X-ray diffraction imaging investigation of silicon carbide on insulator structures (literal)
- Abstract
- A new process was recently developed to manufacture silicon carbide on
insulator structures (SiCOI). The process consists of several steps: (i)
hydrogen implantation into an oxidised SiC wafer, (ii) bonding the oxidised
surface of this wafer to an oxidised silicon substrate and (iii) high
temperature splitting of a thin SiC film from the SiC wafer at the
depth of the maximum hydrogen concentration and further annealing of the
splitted film. The defect generation occurring during this process was
investigated by synchrotron radiation X-ray diffraction topography, with
special emphasis on to the last two steps. Various X-ray topographic
techniques were used to characterise the lattice defects inside the SiC
wafer, to quantify the strong lattice distortion near the edges of the
splitted SiC film and to reveal SiC film regions lost during the splitting
process. Moreover, we show that the strain fields of dislocations, observed
in the silicon substrate after high temperature splitting and annealing of
the splitted structure, induce a corresponding deformation in the thin SiC
overlayer, despite the presence of the sandwiched oxide film. The defect
density is much lower in the central region of the SiCOI structure. (literal)
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