Dual metal SiC Schottky rectifiers with low power dissipation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Dual metal SiC Schottky rectifiers with low power dissipation (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Roccaforte F., La Via F., Di Franco S., Raineri V. (2003)
  Dual metal SiC Schottky rectifiers with low power dissipation
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte F., La Via F., Di Franco S., Raineri V. (literal)

Pagina inizio

• 524 (literal)

Pagina fine

• 528 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 70 (literal)

Rivista

• Microelectronic engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Titolo

• Dual metal SiC Schottky rectifiers with low power dissipation (literal)

Abstract

• Nickel and titanium are the most commonly used metals for Schottky barrier diodes on silicon carbide (SiC). Ti has a low Schottky barrier height (i.e. about 0.8 eV on 6H-SiC), whilst Ni has a higher barrier (i.e. about 1.25 eV). Therefore, the first metal allows to achieve a low forward voltage drop VF but leads to a high leakage current. On the other hand, the second one presents the advantage of a lower reverse leakage current but has also a high value of VF. In this work, dual-metal-planar (DMP) Schottky diodes on silicon carbide are reported. The rectifying barrier was formed by using an array of micrometric Ti and Ni2Si (nickel silicide) stripes. This low/ high Schottky barrier allowed to combine the advantages of the two metals, i.e. to fabricate diodes with a forward voltage drop close to that of a Ti diode and with a level of reverse current comparable to that of a Ni2Si diode. Under the application point of view, using this kind of barrier can lead to a reduction of the device power dissipation and an increase of the maximum operating temperature. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)