Schottky ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem? (Articolo in rivista)

Type
Label
  • Schottky ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem? (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via F., Roccaforte F., Raineri V., Mauceri M., Ruggiero A., Musumeci P., Calcagno L., Castaldini A., Cavallini A. (2003)
    Schottky ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via F., Roccaforte F., Raineri V., Mauceri M., Ruggiero A., Musumeci P., Calcagno L., Castaldini A., Cavallini A. (literal)
Pagina inizio
  • 519 (literal)
Pagina fine
  • 523 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 70 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Schottky ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem? (literal)
Abstract
  • The transition from Schottky to ohmic contact in the nickel silicide /SiC system during annealing from 600 to 950 °C was investigated by measuring the electrical properties of the contact and by analyzing the microstructure of the silicide /SiC interface. The graphite clusters formed by carbon atoms during silicidation are uniformly distributed into the silicide layer after annealing at 600 °C and they agglomerate into a thin layer far from the silicide /SiC interface after annealing at 950 °C. At this temperature an increase of the Schottky barrier height was measured, while deep level transient spectroscopy evidences the absence of the 0.5 eV peak related to the carbon vacancies. (literal)
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