Design, fabrication, and testing of an integrated Si-based light modulator (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Design, fabrication, and testing of an integrated Si-based light modulator (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/JLT.2003.808608 (literal)

Alternative label

• Sciuto A., Alessandria A., Libertino S., Coffa S., Coppola G. (2003)
  Design, fabrication, and testing of an integrated Si-based light modulator
  in Journal of lightwave technology (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sciuto A., Alessandria A., Libertino S., Coffa S., Coppola G. (literal)

Pagina inizio

• 228 (literal)

Pagina fine

• 235 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 21 (literal)

Rivista

• Journal of lightwave technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dept Phys, I-95129 Catania, Italy; CNR, IMM, Sez Catania, I-95121 Catania, Italy; STMicroelect, DSG R&D, I-95121 Catania, Italy; STMicroelect, Corp R&D, I-95121 Catania, Italy; CNR, IMM, Sez Napoli, I-80125 Naples, Italy (literal)

Titolo

• Design, fabrication, and testing of an integrated Si-based light modulator (literal)

Abstract

• We have fabricated and characterized a novel Si-based light modulator working at the standard communication wavelength of 1.5 mum. It consists of a three-terminal bipolar mode field effect transistor integrated with a silicon rib waveguide on epitaxial Si wafers. The modulator optical channel is embodied within its vertical electrical channel. Light modulation is achieved moving a plasma of carriers inside and outside the optical channel by properly biasing the control electrode. The carriers produce an increase of the Si absorption coefficient. The devices have been fabricated using clean-room, processing. Detailed electrical characterization and device simulations confirm that strong conductivity modulation and plasma formation in the channel are achieved. The plasma distribution in the device under different bias conditions has been directly derived from emission microscopy analyses. The device performances in terms of modulation depth will be presented. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Autore CNR

• ANTONELLA SCIUTO (Unità di personale interno)
• SEBANIA LIBERTINO (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Insieme di parole chiave

• Keywords of "Design, fabrication, and testing of an integrated Si-based light modulator" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SEBANIA LIBERTINO (Unità di personale interno)
• ANTONELLA SCIUTO (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of lightwave technology (Rivista)

Insieme di parole chiave di

• Keywords of "Design, fabrication, and testing of an integrated Si-based light modulator" (Insieme di parole chiave)