Carrier concentration and mobility in B doped Si1-xGex (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Carrier concentration and mobility in B doped Si1-xGex (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0921-5107(02)00621-9 (literal)

Alternative label

• Romano L., Napolitani E., Privitera V., Scalese S., Terrasi A., Mirabella S., Grimaldi M.G. (2003)
  Carrier concentration and mobility in B doped Si1-xGex
  in Materials science & engineering. B, Solid-state materials for advanced technology; ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE (Svizzera)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Romano L., Napolitani E., Privitera V., Scalese S., Terrasi A., Mirabella S., Grimaldi M.G. (literal)

Pagina inizio

• 49 (literal)

Pagina fine

• 52 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 102 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM, I-95123 Catania, Italy Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy INFM, IT-35131 Padua, Italy Univ Padua, Dipartimento Fis, IT-35131 Padua, Italy CNR, IMM, IT-95121 Catania, Italy (literal)

Titolo

• Carrier concentration and mobility in B doped Si1-xGex (literal)

Abstract

• Hall effect measurements in the 4-300 K temperature range have been used to investigate the electrical properties of B doped Si1-xGex layers (with 0 less than or equal to x less than or equal to 0.2) grown on Si(100) by MBE. The Hall concentration and mobility of strained and relaxed Si1-xGex layers have been converted into carrier concentration and drift mobility using the appropriate Hall scattering factor r(H) that has been determined by the comparison between the chemical B concentration profile (measured by secondary ion mass spectrometry) and the Hall carrier concentration. The mobility of both relaxed and strained layers was equal to that of Si and independent of the Ge concentration for x < 0.2 and B concentration greater than or equal to 10(18) cm(-3). The Hall scattering factor as a function of temperature has been determined. (literal)

Editore

• ELSEVIER SCIENCE SA (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR

• VITTORIO PRIVITERA (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• SILVIA SCALESE (Persona)
• ENRICO NAPOLITANI (Persona)

Insieme di parole chiave

• Parole chiave di "Carrier concentration and mobility in B doped Si1-xGex" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• SILVIA SCALESE (Persona)
• ENRICO NAPOLITANI (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Editore di

• ELSEVIER SCIENCE SA (Editore)

Insieme di parole chiave di

• Parole chiave di "Carrier concentration and mobility in B doped Si1-xGex" (Insieme di parole chiave)