Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Roccaforte F., La Via F., La Magna A., Di Franco S., Raineri V. (2003)
  Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier
  in I.E.E.E. transactions on electron devices
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte F., La Via F., La Magna A., Di Franco S., Raineri V. (literal)

Pagina inizio

• 1741 (literal)

Pagina fine

• 1747 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 50 (literal)

Rivista

• I.E.E.E. transactions on electron devices (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Titolo

• Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier (literal)

Abstract

• The electrical characterization of dual-metal-planar Schottky diodes on silicon carbide is reported. The devices were fabricated on both 6H- and 4H-SiC by using titanium (Ti) and nickel silicide (Ni2Si) as Schottky metals. These rectifiers yielded the same forward voltage drop as the Ti diodes and leakage current densities comparable to those of the Ni2Si diodes. The reduction of the reverse leakage current density, with respect to that of the Ti diodes, was about three orders of magnitude in 6H and about a factor of 30 in 4H-SiC. All that results in a consistent reduction of the device power dissipation. Electrical characterization of the devices at different temperatures provided insight into the carrier transport mechanism. In particular, the electrical behavior of the system was explained by an \"inhomogeneous\" Schottky barrier model, in which the low Ti barrier determines the current flow under forward bias, whereas the high Ni2Si barrier dominates the reverse bias conduction by the pinchoff of the low barrier Ti regions. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• ANTONINO LA MAGNA (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• ANTONINO LA MAGNA (Persona)
• VITO RAINERI (Persona)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• I.E.E.E. transactions on electron devices (Rivista)