Richardson's constant in inhomogeneous silicon carbide Schottky contacts (Articolo in rivista)

Type
Label
  • Richardson's constant in inhomogeneous silicon carbide Schottky contacts (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Roccaforte F., La Via F., Raineri V., Pierobon R., Zanoni E. (2003)
    Richardson's constant in inhomogeneous silicon carbide Schottky contacts
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roccaforte F., La Via F., Raineri V., Pierobon R., Zanoni E. (literal)
Pagina inizio
  • 9137 (literal)
Pagina fine
  • 9144 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 93 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Richardson's constant in inhomogeneous silicon carbide Schottky contacts (literal)
Abstract
  • The electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC) is reported in this article. In spite of the nearly ideal behavior of the contact at room temperature (n=1.05), the electrical behavior monitored in a wide temperature range exhibited a deviation from the ideality at lower temperatures, thus suggesting that. an inhomogeneous barrier has actually formed. A description of the experimental results by the Tung's model, i.e., considering an effective area of the inhomogeneous contact, provided a procedure for a correct determination of the Richardson's constant A**. An effective area lower than the geometric area of the diode is responsible for the commonly observed discrepancy in the experimental values of A** from its theoretical value in silicon carbide. The same method was applied to Ti/4H-SiC contacts. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it