Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S1386-9477(02)00613-6 (literal)

Alternative label

• D. Pacifici, G. Franzò, F. Iacona and F. Priolo (2003)
  Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties
  in Physica. E, Low-dimensional systems and nanostructures (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• D. Pacifici, G. Franzò, F. Iacona and F. Priolo (literal)

Pagina inizio

• 404 (literal)

Pagina fine

• 409 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 16 (literal)

Rivista

• Physica. E, Low-dimensional systems and nanostructures (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3-4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM, Corso Italia 57, I-95129 Catania, Italy. Dipartimento Fis & Astron, I-95129 Catania, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties (literal)

Abstract

• In this paper the amorphization of Si nanocrystals (nc) by ion beam irradiation and the subsequent recrystallization are investigated in detail. The luminescence properties of Si nanocrystals embedded within a SiO2 matrix are used as a probe of the damaging effects generated by high-energy ion beam irradiation. Samples have been irradiated with 2 MeV Si+ ions at different doses, in the range between 1 x 10(9) and 1 X 10(16) cm(-2). By increasing the ion dose, the nc-related photoluminescence (PL) strongly decreases after a critical dose value. It is shown that the lifetime quenching alone cannot quantitatively explain the much stronger PL drop, but the total number of emitting centers has to diminish too. Moreover, we studied the recovery of the amorphized Si nc by performing thermal annealings. It is demonstrated that the recovery of the PL properties of completely amorphized Si nc is characterized by a single activation energy, whose value is 3.4 eV. Actually, this energy is associated to the transition between the amorphous and the crystalline phases of each Si grain. The recrystallization kinetics of Si nanostructures is demonstrated to be very different from that of a bulk system. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO SANTO IACONA (Persona)
• GIORGIA FRANZO' (Unità di personale interno)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• FABIO SANTO IACONA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica. E, Low-dimensional systems and nanostructures (Rivista)