MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates (Articolo in rivista)

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Label
  • MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0022-0248(02)01855-9 (literal)
Alternative label
  • Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Pentimalli M., Tapfer L., Mancini A.M. (2003)
    MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Pentimalli M., Tapfer L., Mancini A.M. (literal)
Pagina inizio
  • 37 (literal)
Pagina fine
  • 42 (literal)
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  • http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=Z14p@7mBbgEf5HpK98F&page=1&doc=2 (literal)
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  • 248 (literal)
Rivista
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  • 6 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
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  • Univ Lecce, INFM, I-73100 Lecce, Italy Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy CNR, IMM, Sez Lecce, I-73100 Lecce, Italy Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan Ctr Ric Brindisi, MAT, UTS, ENEA, I-72100 Brindisi, Italy (literal)
Titolo
  • MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates (literal)
Abstract
  • The growth of ZnTe by atmospheric pressure metalorganic vapour phase epitaxy on (1 0 0)ZnTe:P substrates is reported. The epilayers were grown at 340degreesC after in situ H, heat cleaning of the substrate for surface oxide removal. Secondary ion mass spectrometry analysis of as-grown samples has shown that in situ treatment temperatures above 240degreesC are necessary. Moreover, no phosphorous incorporation occurs in the epilayers by either diffusion from the substrate or auto-doping through the vapour. Carbon is instead incorporated in the epilayers at concentrations higher than in the substrate. 4.2 K photoluminescence (PL) measurements shock a dominant band edge emission, whose main component at 2.3809 eV is identified. by comparison with reflectance spectra, with the Is-state free exciton line. its FWHM being 2.2 meV. A weak 2s-state exciton line also appears on the high-energy side of the ground-state emission. further confirming the high optical quality and purity of the epilayers. Donor and acceptor bound exciton lines are also identified within the band edge region, whilst free-to-bound and donor-acceptor pair bands below 2.37 eV in the PL spectra are ascribed to luminescence from the substrate. (literal)
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