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MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates (Articolo in rivista)
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- MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates (Articolo in rivista) (literal)
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- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0022-0248(02)01855-9 (literal)
- Alternative label
Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Pentimalli M., Tapfer L., Mancini A.M. (2003)
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates
in Journal of crystal growth
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- Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Pentimalli M., Tapfer L., Mancini A.M. (literal)
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- Univ Lecce, INFM, I-73100 Lecce, Italy
Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
CNR, IMM, Sez Lecce, I-73100 Lecce, Italy
Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
Ctr Ric Brindisi, MAT, UTS, ENEA, I-72100 Brindisi, Italy (literal)
- Titolo
- MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates (literal)
- Abstract
- The growth of ZnTe by atmospheric pressure metalorganic vapour phase epitaxy on (1 0 0)ZnTe:P substrates is reported. The epilayers were grown at 340degreesC after in situ H, heat cleaning of the substrate for surface oxide removal. Secondary ion mass spectrometry analysis of as-grown samples has shown that in situ treatment temperatures above 240degreesC are necessary. Moreover, no phosphorous incorporation occurs in the epilayers by either diffusion from the substrate or auto-doping through the vapour. Carbon is instead incorporated in the epilayers at concentrations higher than in the substrate. 4.2 K photoluminescence (PL) measurements shock a dominant band edge emission, whose main component at 2.3809 eV is identified. by comparison with reflectance spectra, with the Is-state free exciton line. its FWHM being 2.2 meV. A weak 2s-state exciton line also appears on the high-energy side of the ground-state emission. further confirming the high optical quality and purity of the epilayers. Donor and acceptor bound exciton lines are also identified within the band edge region, whilst free-to-bound and donor-acceptor pair bands below 2.37 eV in the PL spectra are ascribed to luminescence from the substrate. (literal)
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