Transient analysis of a high-speed thermo-optic modulator integrated in an all-silicon waveguide (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Transient analysis of a high-speed thermo-optic modulator integrated in an all-silicon waveguide (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Iodice M., Della Corte F.G., Rendina I., Sarro P.M., Bellucci M. (2003)
  Transient analysis of a high-speed thermo-optic modulator integrated in an all-silicon waveguide
  in Optical engineering (Bellingham, Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Iodice M., Della Corte F.G., Rendina I., Sarro P.M., Bellucci M. (literal)

Pagina inizio

• 169 (literal)

Pagina fine

• 175 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 42 (literal)

Rivista

• Optical engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM-CNR Sezione di Napoli, Via Diocleziano 328, 80124Napoli Italy DIMES-TUDELFT, Feldmanweg 17, 2628CT, Delft, The Netherlands (literal)

Titolo

• Transient analysis of a high-speed thermo-optic modulator integrated in an all-silicon waveguide (literal)

Abstract

• A combined thermal and optical simulation study is performed on an all-silicon waveguide integrated thermo-optic Fabry-Perot modulator to assess the impact of the driving signal shape on the device speed performances. The results clearly indicate that the cooling phase after pulse constitutes the true speed-limiting factor the application of a heat of a device, which is otherwise in thermal equilibrium with the environment. Therefore, to enhance the heat exchange in this phase, we analyze the hypothesis of applying a thermal bias and hold the modulator at a higher average temperature with respect to the environment and the substrate heat sink. With this approach, a new driving signal is proposed and predicted to allow a transmission rate of 2.2 Mb/s, representing over a 30-fold bandwidth widening with respect to the standard modulation scheme. We also discuss the fabrication process of this kind of modulator, reporting on its first prototypal realization and preliminary optical characterization. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR

• FRANCESCO GIUSEPPE DELLA CORTE (Persona)
• MARIO IODICE (Unità di personale interno)
• IVO RENDINA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR di

• MARIO IODICE (Unità di personale interno)
• FRANCESCO GIUSEPPE DELLA CORTE (Persona)
• IVO RENDINA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Optical engineering (Rivista)