Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S1386-9477(02)00605-7 (literal)

Alternative label

• L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburro, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò and F. Iacona (2003)
  Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals
  in Physica. E, Low-dimensional systems and nanostructures (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburro, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò and F. Iacona (literal)

Pagina inizio

• 297 (literal)

Pagina fine

• 308 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 16 (literal)

Rivista

• Physica. E, Low-dimensional systems and nanostructures (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 12 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3-4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM, I-38050 Povo, Trento, Italy. Univ Trento, Dipartimento Fis, I-38050 Trent, Italy INFM, I-95129 Catania, Italy Univ Catania, Dipartimento Fis, I-95129 Catania, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals (literal)

Abstract

• Observation of optical gain in silicon nanocrystals (Si-nc) is critically dependent on a very delicate balance among the Si-nc gain cross-sections, the optical mode losses and confinement factors of the waveguide structures, the Si-nc concentration and the strongly competing fast non-radiative Auger processes. Here we report on optical gain measurements by variable stripe length (VSL) method on a set of silicon nanocrystals formed by thermal annealing at 1250degreesC of SiOx films with different silicon contents prepared by plasma-enhanced chemical vapour deposition. Time-resolved VSL has revealed fast component in the recombination dynamics under gain conditions. Fast lifetime narrowing and superlinear emission has been unambiguously observed. To explain our experimental results we propose a four levels recombination model. Within a phenomenological rate equations description including Auger processes and amplified spontaneous emission we obtained a satisfactory agreement with time-resolved experiments and explained the strong competition between stimulated emission and fast non-radiative Auger processes. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABIO SANTO IACONA (Persona)
• GIORGIA FRANZO' (Unità di personale interno)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• FABIO SANTO IACONA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica. E, Low-dimensional systems and nanostructures (Rivista)