The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N-2 : N2O. III. Initial conditions (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N-2 : N2O. III. Initial conditions (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1007/s00339-002-1997-0 (literal)

Alternative label

• Cerofolini G.F., Galati C., Lorenti S., Renna L., Viscuso O., Bongiorno C., Raineri V., Spinella C., Condorelli G.G., Fragala I.L., Terrasi A. (2003)
  The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N-2 : N2O. III. Initial conditions
  in Applied physics. A, Materials science & processing (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cerofolini G.F., Galati C., Lorenti S., Renna L., Viscuso O., Bongiorno C., Raineri V., Spinella C., Condorelli G.G., Fragala I.L., Terrasi A. (literal)

Pagina inizio

• 403 (literal)

Pagina fine

• 409 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 77 (literal)

Rivista

• Applied physics. A, Materials science & processing (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, Inst Microelect & Microsyst, I-95121 Catania, CT, Italy; Univ Catania, Dept Chem, I-95121 Catania, CT, Italy; Univ Catania, INFM, I-95121 Catania, CT, Italy; Univ Catania, Dept Phys, I-95121 Catania, CT, Italy; STMicroelectronics, I-20041 Agrate Brianza, MI, Italy (literal)

Titolo

• The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N-2 : N2O. III. Initial conditions (literal)

Abstract

• The structure and thermal stability in N-2 of hydrogen-terminated (100) silicon has been studied by X-ray photoemission spectroscopy, transmission electron microscopy, atomic force microscopy, thermal programmed desorption, and reflection high energy electron diffraction. Device-quality surfaces were prepared in an open-chamber reactor by exposing single crystalline, (100) oriented silicon to H-2 at high temperature (850 degreesC or 1100 degreesC) for durations on the order of 10(2) s. The observed stability with respect to N-2 at 850 degreesC is inconsistent with the reported desorption kinetics and may be accounted for in terms of either physico-chemical properties of the system (e.g., the presence of a buried layer of H-2 or of hydrogen-decorated vacancies whose out-diffusion restores the hydrogen terminations on the surface) or the reactor (persistence of hydrogen in the atmosphere even after switching it off). The nitridation by N-2 of hydrogen-terminated silicon is less efficient (per unit exposure) than that by N2O by 4 orders of magnitude. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROSARIO CORRADO SPINELLA (Persona)
• CORRADO BONGIORNO (Unità di personale interno)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• CORRADO BONGIORNO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics. A, Materials science & processing (Rivista)