1.55 mm silicon-based reflection-type waveguide-integrated thermo-optic switch (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• 1.55 mm silicon-based reflection-type waveguide-integrated thermo-optic switch (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Cantore F., Della Corte F.G. (2003)
  1.55 mm silicon-based reflection-type waveguide-integrated thermo-optic switch
  in Optical engineering (Bellingham, Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cantore F., Della Corte F.G. (literal)

Pagina inizio

• 2835 (literal)

Pagina fine

• 2840 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 42 (literal)

Rivista

• Optical engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Titolo

• 1.55 mm silicon-based reflection-type waveguide-integrated thermo-optic switch (literal)

Abstract

• A novel rib waveguide-integrated switch is proposed and theoretically discussed. The device is based on the total internal reflection phenomenon (TIR) and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapor deposition techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be achieved, however, at the interface by acting on the temperature, because the two materials have different thermo-optic coefficients. The switch is integrated in a 4-mum-wide and 3-mum-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. The active middle region optimal length is 282 mum. The device performance is analyzed at a wavelength of 1.55 mum. It is shown that the output crosstalk and insertion loss are less than -26 and 3.5 dB, respectively. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO GIUSEPPE DELLA CORTE (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FRANCESCO GIUSEPPE DELLA CORTE (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Optical engineering (Rivista)