Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing (Articolo in rivista)

Type
Label
  • Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.1459725 (literal)
Alternative label
  • Whelan S.(1), Privitera V.(1), Italia M.(1), Mannino G.(1), Bongiorno C.(1), Spinella C.(1), Fortunato G.(2), Mariucci L.(2), Stanizzi M.(2), Mittiga A.(3) (2002)
    Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing
    in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Whelan S.(1), Privitera V.(1), Italia M.(1), Mannino G.(1), Bongiorno C.(1), Spinella C.(1), Fortunato G.(2), Mariucci L.(2), Stanizzi M.(2), Mittiga A.(3) (literal)
Pagina inizio
  • 644 (literal)
Pagina fine
  • 649 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 20 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) IMETEM (CNR), Stradale Primosole 50, 95121 Catania, Italy (2) IESS (CNR), Via Cineto Romano 42, 00156 Rome, Italy (3) ENEA-Casaccia, Via Anguillarese 301, 00060 Santa Maria Galeria, Italy (literal)
Titolo
  • Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing (literal)
Abstract
  • The electrical activation of B in Si following excimer laser annealing has been investigated with transmission electron microscopy (TEM) and spreading resistance profiling. Ultrashallow profiles, extending to a depth of 35 nm, have formed in Si following laser annealing. The lateral distribution of the implanted B following laser annealing has been studied with two-dimensional measurements using selective etching and cross-sectional TEM on samples where the implanted dopant was confined within an oxide mask. The results show that there is substantial lateral diffusion of B under the oxide mask when melting occurs in this region. However it is shown in this article that the melting of the Si under the masked region can be controlled by the oxide thickness. Dopant diffusion into the bulk was observed after a combination of laser and rapid thermal annealing (RTA). The TEM results suggest that there is considerable lattice strain at the liquid-crystal interface after regrowth of the layer, which was subsequently removed following a RTA process step. (literal)
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