http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35283
Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+ (Articolo in rivista)
- Type
- Label
- Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+ (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1149/1.1456537 (literal)
- Alternative label
Taghavinia N., Lerondel G., Makino H., Parisini A., Yamamoto A., Yao T., Kawazoe Y., Goto T. (2002)
Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+
in Journal of the Electrochemical Society
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Taghavinia N., Lerondel G., Makino H., Parisini A., Yamamoto A., Yao T., Kawazoe Y., Goto T. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Department of Physics, Tohoku University, Sendai 980-8578, Japan
Istituto Lamel CNR, I-40129 Bologna, Italy (literal)
- Titolo
- Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+ (literal)
- Abstract
- Zn2SiO4:Mn2+ crystalline particles were grown into oxidized porous silicon
layers by chemical impregnation of porous silicon. The size of particles is
about 150 nm, with slight alignment in the direction of pores. X-ray
mapping data and decay time measurements demonstrate that segregated
Zn2SiO4:Mn2+ particles have formed inside an oxidized porous silicon
structure. The layers emit green luminescence, which comes from the
Zn2SiO4:Mn2+ particles embedded in the porous layer. The oxidation of Si
skeleton makes it transparent to the luminescence light. The pore size and
skeleton size of the processed layers were found almost two times larger
than the starting porous silicon layers. Impregnation was found almost
uniform in depth, i.e., 24% deviation from average. The luminescence decay
time decreases with increasing Mn content. At low temperature, the decay
curves show a saturating trend, while at higher temperatures this trend is
less observable. These results can be explained using a model which
accounts for the contribution of traps to the luminescence. The double
exponential function which results from the model can well fit the decay
curves. (literal)
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