http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35267
Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure (Articolo in rivista)
- Type
- Label
- Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Roccaforte F., La Via F., Di Franco S., Raineri V. (2002)
Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Roccaforte F., La Via F., Di Franco S., Raineri V. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure (literal)
- Abstract
- A dual-metal-planar rectifier on 6H-SiC was fabricated using Ti and Ni2Si
as Schottky metals. The forward current voltage (I -V) characteristic of
the dual-metal devices was comparable with that of Ti diodes. On the other
hand, under reverse bias, almost the same leakage current of the Ni2Si
rectifiers was achieved, i.e., a factor 1000 lower than that of Ti diodes.
The fabricated diodes allowed to obtain a power dissipation of 0.37 W/cm2,
significantly reduced with respect to the Ti and Ni2Si diodes dissipation.
Moreover, the breakdown voltage was the same as in the planar Ni2Si diode,
thus indicating that the planar structure is very efficient in avoiding
electric field crowding at the titanium stripes edges. (literal)
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