http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35266
Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD (Articolo in rivista)
- Type
- Label
- Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0022-3093(01)01088-2 (literal)
- Alternative label
Rizzoli R., Centurioni E., Pla J., Summonte C., Migliori A., Desalvo A., Zignani F. (2002)
Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD
in Journal of non-crystalline solids; ELSEVIER, NEW YORK (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Rizzoli R., Centurioni E., Pla J., Summonte C., Migliori A., Desalvo A., Zignani F. (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-Lamel, via Gobetti 101, I-40129 Bologna, Italy
Dip. Chimica Applicata e Scienza dei Materiali, University of Bologna, I-40136 Bologna, Italy
Grupo Energ??a Solar, CAC-CNEA, Av. Gral. Paz 1499, 1650 San Mart??n, Buenos Aires, Argentine (literal)
- Titolo
- Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD (literal)
- Abstract
- We present homojunction and micro-c-Si/a-Si:H/c-Si heterojunction silicon
solar cells fabricated by PECVD. The H2 dilution used during the i-layer
growth strongly affects the device efficiency. While intermediate H2
dilution of the gas mixture results in V-infinite degradation, the best
V-infinite is obtained under zero or very high (= 99.4%) H2 dilution,
resulting in totally amorphous or epitaxial i-layer respectively. A maximum
value of 638 mV, with 13.7% e.ciency, is observed in the case of an
amorphous i-layer, indicating an improvement of interface quality. If the
i-layer is deposited using a 99.4% H2 dilution, a 608 mV V-infinite is
observed and for homojunction solar cells a 13.1% efficiency is obtained. (literal)
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