Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD (Articolo in rivista)

Type
Label
  • Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0022-3093(01)01088-2 (literal)
Alternative label
  • Rizzoli R., Centurioni E., Pla J., Summonte C., Migliori A., Desalvo A., Zignani F. (2002)
    Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD
    in Journal of non-crystalline solids; ELSEVIER, NEW YORK (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rizzoli R., Centurioni E., Pla J., Summonte C., Migliori A., Desalvo A., Zignani F. (literal)
Pagina inizio
  • 1203 (literal)
Pagina fine
  • 1207 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 299 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-Lamel, via Gobetti 101, I-40129 Bologna, Italy Dip. Chimica Applicata e Scienza dei Materiali, University of Bologna, I-40136 Bologna, Italy Grupo Energ??a Solar, CAC-CNEA, Av. Gral. Paz 1499, 1650 San Mart??n, Buenos Aires, Argentine (literal)
Titolo
  • Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVD (literal)
Abstract
  • We present homojunction and micro-c-Si/a-Si:H/c-Si heterojunction silicon solar cells fabricated by PECVD. The H2 dilution used during the i-layer growth strongly affects the device efficiency. While intermediate H2 dilution of the gas mixture results in V-infinite degradation, the best V-infinite is obtained under zero or very high (= 99.4%) H2 dilution, resulting in totally amorphous or epitaxial i-layer respectively. A maximum value of 638 mV, with 13.7% e.ciency, is observed in the case of an amorphous i-layer, indicating an improvement of interface quality. If the i-layer is deposited using a 99.4% H2 dilution, a 608 mV V-infinite is observed and for homojunction solar cells a 13.1% efficiency is obtained. (literal)
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