Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE (Articolo in rivista)

Type
Label
  • Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Prete P., Lovergine N., Di Luccio T., Tapfer L., Mancini A.M. (2002)
    Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Prete P., Lovergine N., Di Luccio T., Tapfer L., Mancini A.M. (literal)
Pagina inizio
  • 56 (literal)
Pagina fine
  • 61 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 248 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE (literal)
Abstract
  • A detailed structural characterization of ZnSe/ZnMgSe multiple quantum wells (MQWs) grown on GaAs by low pressure metalorganic vapour phase epitaxy is presented. ZnSe/Zn0.83Mg0.17Se MQWs having between 6 and 12 periods were deposited at 330°C and 304mbar reactor pressure on (100)GaAs after a 4.2nm ZnSe buffer layer. The MQWs had nominal 4.4nm thick ZnSe wells and 5.3nm thick Zn0.83Mg0.17Se barriers. The MQW structural properties were investigated by high-resolution X-ray diffraction (HRXRD) and X-ray specular reflectivity (XSR) measurements. Besides the MQWs-substrate mismatch, simulation of the HRXRD and XSR patterns allowed to determine the MQW period, individual layer thickness and barrier composition. Between 8 and 10 periods the MQW structure begins to relax, its critical thickness on GaAs being between 92 and 113nm. Furthermore, HRXRD showed broader zeroth and first-order satellite peaks with increasing MQW periods, a result ascribed to strain fluctuations induced by either inhomogeneous Mg incorporation in the ZnSe lattice and/or interface roughening. Comparison of experimental and simulated XSR patterns allowed to determine the rms roughness at each multilayer interface, which linearly increases along the growth direction due to a cumulative intrinsic roughening. (literal)
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