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Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE (Articolo in rivista)
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- Label
- Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Prete P., Lovergine N., Di Luccio T., Tapfer L., Mancini A.M. (2002)
Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE
in Journal of crystal growth
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- Prete P., Lovergine N., Di Luccio T., Tapfer L., Mancini A.M. (literal)
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- ISI Web of Science (WOS) (literal)
- Titolo
- Structural characterization of znse/znmgse mqws grown on (100) gaas by low pressure MOVPE (literal)
- Abstract
- A detailed structural characterization of ZnSe/ZnMgSe multiple quantum
wells (MQWs) grown on GaAs by low pressure metalorganic vapour phase
epitaxy is presented. ZnSe/Zn0.83Mg0.17Se MQWs having between 6 and 12
periods were deposited at 330°C and 304mbar reactor pressure on (100)GaAs
after a 4.2nm ZnSe buffer layer. The MQWs had nominal 4.4nm thick ZnSe
wells and 5.3nm thick Zn0.83Mg0.17Se barriers. The MQW structural
properties were investigated by high-resolution X-ray diffraction (HRXRD)
and X-ray specular reflectivity (XSR) measurements. Besides the
MQWs-substrate mismatch, simulation of the HRXRD and XSR patterns allowed
to determine the MQW period, individual layer thickness and barrier
composition. Between 8 and 10 periods the MQW structure begins to relax,
its critical thickness on GaAs being between 92 and 113nm. Furthermore,
HRXRD showed broader zeroth and first-order satellite peaks with increasing
MQW periods, a result ascribed to strain fluctuations induced by either
inhomogeneous Mg incorporation in the ZnSe lattice and/or interface
roughening. Comparison of experimental and simulated XSR patterns allowed
to determine the rms roughness at each multilayer interface, which linearly
increases along the growth direction due to a cumulative intrinsic
roughening. (literal)
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