Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition (Articolo in rivista)

Type
Label
  • Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1456241 (literal)
Alternative label
  • G. Vijaya Prakash, M. Cazzanelli, Z. Gaburro, L. Pavesi, F. Iacona, G. Franzò, F. Priolo (2002)
    Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Vijaya Prakash, M. Cazzanelli, Z. Gaburro, L. Pavesi, F. Iacona, G. Franzò, F. Priolo (literal)
Pagina inizio
  • 4607 (literal)
Pagina fine
  • 4610 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 91 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Trento, INFM, Via Sommarive 14, I-38050 Povo, Italy. CNR, IMETEM, I-95121 Catania, Italy Univ Catania, INFM, I-95129 Catania, Italy Univ Catania, Dipartimento Fis, I-95129 Catania, Italy (literal)
Titolo
  • Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition (literal)
Abstract
  • The real and imaginary parts of third-order nonlinear susceptibility x(3) have been measured for silicon nanocrystals embedded in SiO2 matrix, formed by high temperature annealing of SiOx films prepared by plasma-enhanced chemical vapor deposition. Measurements have been performed using a femtosecond Ti-sapphire laser at 813 nm using the Z-scan technique with maximum peak intensities up to 2E10 W/cm2. The real part of x(3) shows positive nonlinearity for all samples. Intensity-dependent nonlinear absorption is observed and attributed to two-photon absorption processes. The absolute value of x(3) is on the order of 1029 esu and shows a systematic increase as the silicon nanocrystalline size decreases. This is due to quantum confinement effects. (literal)
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