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Stopping power of sio2 for 0.2?3.0 mev He ions (Articolo in rivista)
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- Label
- Stopping power of sio2 for 0.2?3.0 mev He ions (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Pascual-Izarra C., Bianconi M., Lulli G., Summonte. (2002)
Stopping power of sio2 for 0.2?3.0 mev He ions
in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
(literal)
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- Pascual-Izarra C., Bianconi M., Lulli G., Summonte. (literal)
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- ISI Web of Science (WOS) (literal)
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- Departamento de F??sica Aplicada - CMAM, Universidad Aut?onoma de Madrid
CNR - IMM (literal)
- Titolo
- Stopping power of sio2 for 0.2?3.0 mev He ions (literal)
- Abstract
- The stopping power of SiO2 for 200 keV-3 MeV He ions has been evaluated by
Rutherford backscattering (RBS) and a semiempirical stopping power curve is
proposed in this energy range. The curve is parameterized using the
Andersen and Ziegler's formula, allowing for an easy implementation in any
simulation program. The estimated accuracy of the present stopping power
curve is of the order of 2%. Samples used for the measurements consist of
thin SiO2 films grown by wet thermal oxidation of Si(100) wafers. The
thickness of each sample was independently determined by reflectance
spectroscopy. The fitting of the experimental RBS spectra was performed
using full Monte Carlo calculation of trajectories in the binary collision
approximation. (literal)
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