Diffusion and clustering of supersaturated carbon in sigec layers under oxidation (Articolo in rivista)

Type
Label
  • Diffusion and clustering of supersaturated carbon in sigec layers under oxidation (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0168-583X(01)00868-0 (literal)
Alternative label
  • Napolitani E., De Salvador D., Coati A., Berti M., Drigo A.V., Carroll M.S., Sturm J.C., Stangl J., Bauer G., Spinella C. (2002)
    Diffusion and clustering of supersaturated carbon in sigec layers under oxidation
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Napolitani E., De Salvador D., Coati A., Berti M., Drigo A.V., Carroll M.S., Sturm J.C., Stangl J., Bauer G., Spinella C. (literal)
Pagina inizio
  • 212 (literal)
Pagina fine
  • 217 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 186 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1INFM and Dipartimento di Fisica, via Marzolo 8, I-35131 Padova, ITALY 2Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA 3Institute for Semiconductor Physics, Johannes-Kepler University Linz, Linz, Austria 4IMETEM (CNR), Stradale Primosole 50, I-95121 Catania, ITALY (literal)
Titolo
  • Diffusion and clustering of supersaturated carbon in sigec layers under oxidation (literal)
Abstract
  • In this work we investigated the di.usion and clustering of supersaturated substitutional carbon in 200 nm thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambients at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N2 annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by di.usion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h) which depends on the C concentration. This saturation is due to the formation and growth of C containing precipitates which are promoted by the I injection and act as a sink for mobile C atoms. The competition between clustering and diffusion is discussed for two different C concentrations. (literal)
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