Suppression of boron transient enhanced diffusion by C trapping (Articolo in rivista)

Type
Label
  • Suppression of boron transient enhanced diffusion by C trapping (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Mirabella S., Coati A., Scalese S., De Salvador D., Pulvirenti S., Bisognin G., Napolitani E., Terrasi A., Berti M., Carnera A., Drigo A.V., Priolo F. (2002)
    Suppression of boron transient enhanced diffusion by C trapping
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena; Trans Tech Publications Ltd., Stafa-Zurich (Swaziland)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirabella S., Coati A., Scalese S., De Salvador D., Pulvirenti S., Bisognin G., Napolitani E., Terrasi A., Berti M., Carnera A., Drigo A.V., Priolo F. (literal)
Pagina inizio
  • 195 (literal)
Pagina fine
  • 200 (literal)
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  • IMPLANTED SILICON, CARBON, SI, MECHANISMS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82-84 (literal)
Rivista
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  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 ] INFM, IT-95129 Catania, Italy [ 2 ] Univ Catania, Dipartimento Fis & Astron, IT-95129 Catania, Italy [ 3 ] Univ Padua, Dipartimento Fis, IT-35131 Padua, Italy [ 4 ] Univ Padua, INFM, IT-35131 Padua, Italy (literal)
Titolo
  • Suppression of boron transient enhanced diffusion by C trapping (literal)
Abstract
  • In this work the carbon ability to stop Si-interstitials is investigated in detail. We show that a Si1-yCy layer (y = 0.01 - 0.1 %) located between an interstitial source (produced near the surface by a Si 20 keV implant) and a deep B spike, can intercept the interstitial wind, behaving as a membrane, and can suppress the expected transient enhanced diffusion (TED) in the B spike. In particular, this trapping mechanism is studied as a function of the total carbon dose, and it is shown that a carbon dose equal to the implant dose is able to stop the self-interstitials and suppress the B-TED totally. These results suggest a one-one interaction between the carbon and the self-interstitial in the trapping mechanism. Moreover, experimental evidence for carbon clustering is reported when carbon atoms have trapped Si-interstitials. Finally, an application for the ultra-shallow junctions fabrication is shown, in which a Si1-yCy layer prevents the B-TED due to the backflow of interstitials from the end of range damage in a preamorphized B-implanted silicon sample. (literal)
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