Near-field photocurrent measurements on boron-implanted silicon (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Near-field photocurrent measurements on boron-implanted silicon (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1446654 (literal)

Alternative label

• Marocchi V., Cricenti A., Perfetti P., Chiaradia P., Raineri V., Spinella C. (2002)
  Near-field photocurrent measurements on boron-implanted silicon
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Marocchi V., Cricenti A., Perfetti P., Chiaradia P., Raineri V., Spinella C. (literal)

Pagina inizio

• 3937 (literal)

Pagina fine

• 3939 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 91 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 2 ]CNR, Ist Struttura Mat, I-00133 Rome, Italy [ 2 ] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy [ 3 ] Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy [ 4 ] CNR, IMETEM, I-95121 Catania, Italy (literal)

Titolo

• Near-field photocurrent measurements on boron-implanted silicon (literal)

Abstract

• We report near-field photocurrent (NPC) measurements performed on three boron-implanted silicon samples characterized by different implantation doses. The images were acquired at lambda=1330 nm corresponding to a photon energy of 0.93 eV which is smaller than the silicon energy gap (Egap=1.12 eV), representing incident radiation to which silicon is virtually transparent. The NPC images reveal the presence of boron clusters which are a consequence of B implantation and rapid thermal annealing at 1100 °C for 30 s. Boron clusters behave as metal clusters embedded into the silicon matrix and introduce gap states which give rise to the observed photocurrent. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROSARIO CORRADO SPINELLA (Persona)
• ANTONIO CRICENTI (Unità di personale interno)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• ANTONIO CRICENTI (Unità di personale interno)
• VITO RAINERI (Persona)
• ROSARIO CORRADO SPINELLA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)