Electrical resistivity and Hall coefficient of C49, C40, and C54 tisi2 thin-film phases (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electrical resistivity and Hall coefficient of C49, C40, and C54 tisi2 thin-film phases (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Mammoliti F., Grimaldi M.G., La Via F. (2002)
  Electrical resistivity and Hall coefficient of C49, C40, and C54 tisi2 thin-film phases
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mammoliti F., Grimaldi M.G., La Via F. (literal)

Pagina inizio

• 3147 (literal)

Pagina fine

• 3147 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 92 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM Dipartimento di Fisica Catania (literal)

Titolo

• Electrical resistivity and Hall coefficient of C49, C40, and C54 tisi2 thin-film phases (literal)

Abstract

• The electrical resistivity and Hall coefficient of C49, C40, and C54 TiSi2 thin films were studied in the temperature range of 4-350 K. The residual resistivity was the highest (52-72 microOhmcm) for the C49 phase, lower for the C40 (22-33 microOhmcm), and the lowest for the C54 phase (2.8-3.8 microOhmcm). On the other hand, the Debye temperature decreases from the C54 phase (470-490 K), to the C49 (451 K), and finally to the C40 phase (420 K). The Hall coefficient of the C49 and C40 phases exhibits a temperature independent value. A change of sign for the Hall coefficient occurs in the case of C54 at a temperature of about 80 K indicating that a multicarrier conduction mechanism exists in C54 TiSi2. The value of the scattering length le for the C54 samples is two to three times larger than for the C49 and C40 samples. This difference in the scattering length is suggested to be due to the presence of intrinsic defects in the C49 and C40 phases and/or to the large amount of grain boundaries. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FRANCESCO LA VIA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)